Microwaves and Optoelectronics Group - Devices
MOG-Dev
The research group MOG-Dev focuses on understanding, designing, and optimizing semiconductor devices for modern communication systems, optoelectronics, energy-conversion, power and quantum applications, including transistors, diodes, and emerging nanoelectronic devices. Specifically, the group focus is on heterostructure devices including III-V and II-VI systems, and RF silicon devices, both for microwave and optoelectronics applications. The group’s activity is strongly centered on modelling and simulation, which play a crucial role in predicting device behaviour, in the framework of design technology co-optimization to accelerate innovation.
A primary line of work involves the development of physics-based models for semiconductor devices. These models are grounded in fundamental equations such as the Poisson equation for electrostatics, the Boltzmann transport equation or the drift-diffusion transport equations for semiclassical carrier transport, and, for nanostructures, quantum transport formalisms like the Schrödinger or non-equilibrium Green’s function (NEGF) approaches. The group continuously refines these models to capture non-idealities such as carrier scattering, interface traps, variability, and thermal effects, which become increasingly important as device dimensions shrink to the nanoscale.
Complementing theoretical modelling, the group develops and employs numerical simulation tools. Technology Computer-Aided Design (TCAD) software is widely used to simulate fabrication processes and device operation. The group implements in-house simulation codes specifically oriented to dynamic nonlinear operating conditions, typical of electron devices in microwave circuits, along with the necessary time and frequency domain algorithms.
A significant emphasis is placed on multi-scale and multi-physics simulation. This includes bridging atomistic simulations (e.g., density functional theory for material properties) with continuum-level device models, as well as coupling electrical behaviour with thermal models and electromagnetic propagation effects.
The group contributes to the development of compact models for circuit simulation, translating detailed physical understanding into simplified representations suitable for integration into electronic design automation (EDA) tools. The group also works on parameter extraction and model validation, comparing simulation results with experimental data. This iterative process ensures that models remain predictive and relevant for industrial applications. Close collaboration with the microwave characterization laboratory (MiMILAB) and Design Automation Laboratory (MEDALAB) enables the calibration of models and the interpretation of measurement results, particularly for advanced or unconventional devices.
Another important activity is the optimization and design exploration of novel or emerging semiconductor devices. By leveraging simulation, the group can perform virtual prototyping, exploring large design spaces efficiently. Techniques such as sensitivity analysis, machine learning-assisted modeling, and optimization algorithms are increasingly integrated into the workflow to identify optimal device geometries and materials.
A primary line of work involves the development of physics-based models for semiconductor devices. These models are grounded in fundamental equations such as the Poisson equation for electrostatics, the Boltzmann transport equation or the drift-diffusion transport equations for semiclassical carrier transport, and, for nanostructures, quantum transport formalisms like the Schrödinger or non-equilibrium Green’s function (NEGF) approaches. The group continuously refines these models to capture non-idealities such as carrier scattering, interface traps, variability, and thermal effects, which become increasingly important as device dimensions shrink to the nanoscale.
Complementing theoretical modelling, the group develops and employs numerical simulation tools. Technology Computer-Aided Design (TCAD) software is widely used to simulate fabrication processes and device operation. The group implements in-house simulation codes specifically oriented to dynamic nonlinear operating conditions, typical of electron devices in microwave circuits, along with the necessary time and frequency domain algorithms.
A significant emphasis is placed on multi-scale and multi-physics simulation. This includes bridging atomistic simulations (e.g., density functional theory for material properties) with continuum-level device models, as well as coupling electrical behaviour with thermal models and electromagnetic propagation effects.
The group contributes to the development of compact models for circuit simulation, translating detailed physical understanding into simplified representations suitable for integration into electronic design automation (EDA) tools. The group also works on parameter extraction and model validation, comparing simulation results with experimental data. This iterative process ensures that models remain predictive and relevant for industrial applications. Close collaboration with the microwave characterization laboratory (MiMILAB) and Design Automation Laboratory (MEDALAB) enables the calibration of models and the interpretation of measurement results, particularly for advanced or unconventional devices.
Another important activity is the optimization and design exploration of novel or emerging semiconductor devices. By leveraging simulation, the group can perform virtual prototyping, exploring large design spaces efficiently. Techniques such as sensitivity analysis, machine learning-assisted modeling, and optimization algorithms are increasingly integrated into the workflow to identify optimal device geometries and materials.
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Scientific coordinators
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Research team
ALASIO MATTEO GIOVANNI CARMELO
CAGNONI MATTEO
CAMARCHIA VITTORIO
CAPPELLUTI FEDERICA
D'ALESSANDRO MARTINO
DE RUVO EDOARDO
GHIONE GIOVANNI
GOANO MICHELE
GONZALEZ MONTOYA JESUS ALBERTO
MERCINELLI FRANCESCO
MIRI LORENZO
MUDANO' ANGELO
PIACIBELLO ANNA
PIROLA MARCO
RAMELLA CHIARA
TIBALDI ALBERTO
TORRELLI VALERIO
Research area
Research topics
- Microwave semiconductor device modelling and simulation: HEMT su GaAs e GaN, FinFET, nanometric devices, quantum devices and devices for cryogenic applications.
- Advanced simulation of charge carrier transport in dynamic conditions. Semiconductor device noise models based on quantum description (non-equilibrium Green’s Functions).
- Simulation of charge transport in materials and devices in high field regime (e.g. avalanche) based on semiclassical models (Monte Carlo).
- Advanced numerical models for the simulations of electron devices and microwave circuits: Harmonic Balance based nonlinear models, stationary and cyclostationary noise, technological variability, electrothermal model, trap induced nonlinear dispersive effects.
- Modeling and simulation methods for power, photovoltaic, and energy-conversion devices, with emphasis on coupled-domain approaches involving charge transport, photonics, and thermal effects.
Skills
ERC sectors
SDG
Keywords
Research collaborations
- Group for Applied Materials and Electrochemistry
- Microwave and Optoelectronics Group - Photonics
- Microwaves and Optoelectronics Group - Microwaves